Halogen lamp recrystallization of silicon on insulating substrates

作者：D.P. Vu, Michel Haond, D. Bensahel, M. Dupuy · 发表于：Journal of Applied Physics · 年份：1983 · DOI：10.1063/1.331677 · 被引用次数：48 · 研究领域：Thin-Film Transistor Technologies、Solidification and crystal growth phenomena、Silicon Nanostructures and Photoluminescence

Growth of large-area single-crystal silicon on an insulator is achieved by a zone melting technique using halogen lamps. The single-crystal, typically 3–4 mm by several centimeters, is composed of subgrains showing no internal defects, with boundaries parallel to the scan direction. The crystallographic orientation is (001) along the normal to the film plane and (100) along the scan direction.