Optimized fabrication of silicon nanofocusing x-ray lenses using deep reactive ion etching

作者：Olga Kurapova, B. Lengeler, Christian G. Schroer, Matthias Küchler, Thomas Geßner, Andre van der Hart · 发表于：Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 年份：2007 · DOI：10.1116/1.2769361 · 被引用次数：24 · 研究领域：Advanced X-ray Imaging Techniques、Advanced Electron Microscopy Techniques and Applications、Advancements in Photolithography Techniques

The authors describe an improved production route for silicon nanofocusing lenses for hard x rays using e-beam lithography and deep reactive ion etching. As compared to previous prototypes, these optics have a significantly improved from fidelity, reducing spherical aberrations. Close to an ideal performance for the focusing of hard x rays is achieved with these optics, reaching a lateral beam size of about 50nm. The lens profile is checked by scanning electron microscopy.