Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy

作者：Régis Decker, Yang Wang, Victor W. Brar, William Regan, Hsin‐Zon Tsai, Qiong Wu, William Gannett, Alex Zettl, Michael F. Crommie · 发表于：Nano Letters · 年份：2011 · DOI：10.1021/nl2005115 · 被引用次数：616 · 研究领域：Graphene research and applications、Quantum and electron transport phenomena、Topological Materials and Phenomena

The use of boron nitride (BN) as a substrate for graphene nanodevices has attracted much interest since the recent report that BN greatly improves the mobility of charge carriers in graphene compared to standard SiO(2) substrates. We have explored the local microscopic properties of graphene on a BN substrate using scanning tunneling microscopy. We find that BN substrates result in extraordinarily flat graphene layers that display microscopic Moiré patterns arising from the relative orientation of the graphene and BN lattices. Gate-dependent dI/dV spectra of graphene on BN exhibit spectroscopic features that are sharper than those obtained for graphene on SiO(2). We observe a significant reduction in local microscopic charge inhomogeneity for graphene on BN compared to graphene on SiO(2).