The effect of dislocation contrast on x-ray line broadening: A new approach to line profile analysis

作者：T. Ungár, A. Borbély · 发表于：Applied Physics Letters · 年份：1996 · DOI：10.1063/1.117951 · 被引用次数：1375 · 研究领域：X-ray Diffraction in Crystallography、Microstructure and mechanical properties、Surface and Thin Film Phenomena

The x-ray line profiles of an ultrafine grained copper crystal, produced by equal-channel angular pressing, were measured by a special high resolution diffractometer with negligible instrumental line broadening. The analysis of the line breadths and the Fourier coefficients have shown that taking into account the contrast caused by dislocations on line profiles gives new scaling factors in the Williamson–Hall plot and in the Warren–Averbach analysis, respectively. When strain is caused by dislocations the new procedure proposed here enables a straightforward determination of particle size and strain, the latter in terms of the dislocation density.