New oxide phase with wide band gap and high electroconductivity, MgIn2O4

作者：Naoyuki Ueda, Takahisa Omata, Naoko Hikuma, Kazushige Ueda, Hiroshi Mizoguchi, Takuya Hashimoto, Hiroshi Kawazoe · 发表于：Applied Physics Letters · 年份：1992 · DOI：10.1063/1.108374 · 被引用次数：128 · 研究领域：ZnO doping and properties、Gas Sensing Nanomaterials and Sensors、Electronic and Structural Properties of Oxides

It was demonstrated that the MgIn2O4 spinel is a very promising material as a transparent electronic conductor. By the measurements of diffuse reflectance spectra, the optical band gap of MgIn2O4 (∼3.4 eV) was found to be wider than that of ITO (indium tin oxide). Electrical conductivity of the sintered sample of MgIn2O4 at room temperature has reached almost 102 S cm−1 with no intentional doping. The conduction was found to be due to electrons introduced from oxygen vacancies.