InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

作者：Niamh Waldron, Clément Merckling, Lieve G. Teugels, Patrick Ong, Sheik Ansar Usman Ibrahim, Farid Sebaai, A. M. Pourghaderi, Kathy Barla, Nadine Collaert, Aaron Thean · 发表于：IEEE Electron Device Letters · 年份：2014 · DOI：10.1109/led.2014.2359579 · 被引用次数：98 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Nanowire Synthesis and Applications

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an LGof 60 nm an extrinsic gmof 1030 μS/μm at Vds= 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to Ditresulting in an SSSATof 66 mV/decade and negligible drain-induced barrier lowering for 85-nm LGdevices.