Boron concentration and impurity-to-band activation energy in diamond

作者：J. C. Bourgoin, J. Krynicki, B. Blanchard · 发表于：physica status solidi (a) · 年份：1979 · DOI：10.1002/pssa.2210520132 · 被引用次数：31 · 研究领域：Diamond and Carbon-based Materials Research、Advanced Materials Characterization Techniques、Ion-surface interactions and analysis

The determination of the boron concentration, NA, in synthetic boron diamonds is performed using secondary ion mass spectroscopy, electrical (conductivity and capacitance), and optical absorption methods. Evaluation of the concentration of compensating centres, ND, and measurement of the activation energy, E, for excitation of holes into the valence band is made through optical and electrical methods. The variation of E versus NA and ND can be reasonably explained by the influence of the ionized impurities on holes bound to boron.