Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors

作者：Joerg Appenzeller, M. Radosavljević, Joachim Knoch, Phaedon Avouris · 发表于：Physical Review Letters · 年份：2004 · DOI：10.1103/physrevlett.92.048301 · 被引用次数：346 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Graphene research and applications、Nanowire Synthesis and Applications

This Letter focuses on the role of contacts and the influence of Schottky barriers on the switching in nanotransistors. Specifically, we discuss (i) the mechanism for injection from a three-dimensional metal into a low-dimensional semiconductor, i.e., the competition between thermionic emission and thermally assisted tunneling, (ii) the factors that affect tunneling probability with emphasis on the importance of the effective mass for transistor applications, and (iii) a novel approach that enables determination of barrier presence and its actual height.