Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

作者：S. J. Chang, C.F. Shen, W. S. Chen, C. T. Kuo, T.K. Ko, Shih‐Chang Shei, Jinn‐Kong Sheu · 发表于：Applied Physics Letters · 年份：2007 · DOI：10.1063/1.2753726 · 被引用次数：75 · 研究领域：GaN-based semiconductor devices and materials、Nanofabrication and Lithography Techniques、Nanomaterials and Printing Technologies

The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24V while the LED output powers were 11.7, 12.6, and 13.3mW for the conventional ITO LED, ITO LED patterned with 1.75μm holes, and ITO LED patterned with 0.85μm holes, respectively.