Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching

作者：M. Kuball, F Morrissey, Mohamed Benyoucef, Ian R. Harrison, D. Korakakis, C. T. B. Foxon · 发表于：physica status solidi (a) · 年份：1999 · DOI：10.1002/(sici)1521-396x(199911)176:1<355::aid-pssa355>3.0.co;2-i · 被引用次数：27 · 研究领域：GaN-based semiconductor devices and materials、Metal and Thin Film Mechanics、ZnO doping and properties

Focused ion beam etching was used for the nano-fabrication of GaN. GaN pillars as small as 20 to 30 nm in diameter were fabricated. Using secondary electron imaging, the quality of the GaN pillars was investigated as function of the gallium ion beam current used for the etching. Gallium ion beam currents as low as 1 to 4 pA are needed to fabricate nanometer-size GaN structures.