Structure and Origin of Stacking Faults in Epitaxial Silicon

作者：R. H. Finch, Hans Joachim Queisser, G. Thomas, J. Washburn · 发表于：Journal of Applied Physics · 年份：1963 · DOI：10.1063/1.1702622 · 被引用次数：125 · 研究领域：Silicon and Solar Cell Technologies、Thin-Film Transistor Technologies、Silicon Nanostructures and Photoluminescence

Light optical and transmission electron microscopy on epitaxially deposited silicon crystals in [100], [110], and [111] orientation show that growth stacking faults are formed regardless of orientation. These faults occur in bundles of usually tetrahedral figures with the apices at the substrate-film interface, and some faults may exist as closed intrinsic-extrinsic pairs. The results suggest that faults are nucleated by oxygen contamination. Some evidence for impurity segregation to faults is also presented.