High-Performance Field-Effect Transistors Based on Langmuir−Blodgett Films of Cyclo[8]pyrrole

作者：Hai Xu, Gui Yu, Wei Xu, Yu Xu, Guanglei Cui, Deqing Zhang, Yunqi Liu, Daoben Zhu · 发表于：Langmuir · 年份：2005 · DOI：10.1021/la050106d · 被引用次数：44 · 研究领域：Organic Electronics and Photovoltaics、Porphyrin and Phthalocyanine Chemistry、Advanced Memory and Neural Computing

We demonstrate the field-effect transistors (FETs) made of cyclo[8]pyrrole thin films prepared by the Langmuir-Blodgett (LB) method. The cyclo[8]pyrrole molecule possesses a 30-pi-electron system and narrower highest-occupied molecular orbital-lowest-unoccupied molecular orbital energy gap (0.63 eV), forms a stable, reproducible monolayer at the air-water interface, and transfers onto a substrate with a nearly unity transfer ratio and face-to-face configuration due to its strong pi-pi interaction. The LB films are uniform characterized by atomic force microscopy and in ordered form confirmed by X-ray diffraction. The FET exhibited high performances with one of the highest hole mobilities (0.68 cm2 V(-1) s(-1)) for thin-film transistors and a high on/off ratio, implying a promising material in the FET family.