Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

作者：Can Wang, Kui-juan Jin, Zhongtang Xu, Le Wang, Chen Ge, Huibin Lü, Haizhong Guo, Meng He, Guozhen Yang · 发表于：Applied Physics Letters · 年份：2011 · DOI：10.1063/1.3589814 · 被引用次数：365 · 研究领域：Multiferroics and related materials、Ferroelectric and Piezoelectric Materials、Magnetic and transport properties of perovskites and related materials

Current-voltage hysteresis and switchable rectifying characteristics have been observed in epitaxial multiferroic BiFeO3 (BFO) thin films. The forward direction of the rectifying current can be reversed repeatedly with polarization switching, indicating a switchable diode effect and large ferroelectric resistive switching. With analyzing the potential barriers and their variation with ferroelectric switching at the interfaces between the metallic electrodes and the semiconducting BFO, the switchable diode effect can be explained qualitatively by the polarization-modulated Schottky-like barriers.