Micro-photoluminescence and micro-Raman investigations of rolled-up InGaAs/GaAs microtubes monolithically integrated on silicon

作者：Qi Wang, Yunxia Gao, Guoming Mao, Hao Liu, Xiaomin Ren · 发表于：Applied Physics Letters · 年份：2015 · DOI：10.1063/1.4929777 · 被引用次数：8 · 研究领域：Advanced Materials and Mechanics、Micro and Nano Robotics、Advanced Sensor and Energy Harvesting Materials

Free-standing InGaAs/GaAs microtubes have been monolithically integrated on Si platform by self-rolling of a metamorphic InGaAs/GaAs bilayer. Micro-photoluminescence (μ-PL) spectroscopy features that PL peak from Si-based InGaAs/GaAs microtubes is remarkably enhanced in intensity, slightly redshifted in position, and narrowed in full width at half maximum as compared with Si-based as-grown region. Raman spectroscopy manifests that Raman peaks for microtube on Si have smaller wavenumbers than those on GaAs, also detects the obvious blueshift of GaAs longitudinal-optical phonon frequency on microtube with respect to that of their as-grown counterparts.