90 nm CMOS RF technology with 9.0 V I/O capability for single-chip radio

作者：Greg Baldwin, J. Ai, K. Benaissa, F. Chen, P.R. Chidambaram, S. Ekbote, Said Ghneim, S. Liu, C. Machala, F. Mehrad, D. Mosher, G. Pollack, Thanh Toan Tran, B. Williams, J.Y. Yang, Shangfeng Yang, F.S. Johnson · 年份：2004 · DOI：10.1109/vlsit.2003.1221099 · 被引用次数：12 · 研究领域：Radio Frequency Integrated Circuit Design、Semiconductor materials and devices、VLSI and Analog Circuit Testing

In this article, an industry leading 21 mask count 90nm CMOS SoC technology with integrated RF, analog, dense memory, low power or high-speed logic, and high-voltage DEMOS options is demonstrated. RF and analog characteristics with high on-chip voltage capability enable single chip radio design as well as many additional SoC applications.