A 77 GHz low noise amplifier using low-cost 0.13µm CMOS technology

作者：Mehrdad Fahimnia, M.R. Nezhad-Ahamadi, B. Biglarbeigian, S. Safavi-Naieni, Mahmoud Mohammad‐Taheri, Y. Wang · 年份：2009 · DOI：10.1109/mnrc15848.2009.5338958 · 被引用次数：4 · 研究领域：Radio Frequency Integrated Circuit Design、Advancements in PLL and VCO Technologies、Analog and Mixed-Signal Circuit Design

A 77GHz low noise amplifier has been designed using low cost CMOS technology for car radar application. Using two cascode stages with the proposed asymmetric topology, A flat gain of 15 dB is achieved under 36mW power consumption based on the measured S-parameter of each component. Thin-film microstrip lines (TFML) has been used instead of low quality factor bulky inductor. The noise figure of amplifier is 7.3 dB at 77 GHz. The amplifier achieves highest working frequency range among recently published papers using 0.13-µm RF CMOS technology.