Hot carrier solar cells

作者：M. C. Hanna, Z.H. Lu, Arthur J. Nozik · 发表于：AIP conference proceedings · 年份：1997 · DOI：10.1063/1.53477 · 被引用次数：28 · 研究领域：solar cell performance optimization、Semiconductor Quantum Structures and Devices、GaN-based semiconductor devices and materials

We present our investigations of a novel concept for increasing the efficiency of solid state photovoltaic devices. We propose that hot photogenerated carriers can reduce radiative recombination in a p-i-n device structure that has an intrinsic superlattice absorption region. The reduced radiative recombination leads to higher photovoltage and conversion efficiency. We present experimental results on P-i(SL)-N devices fabricated from GaAs/AlGaAs, along with predictions of idealized hot carrier solar cell behavior obtained using a rigorous energy balance device model.