Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface

作者：Mingyang Li, Yumeng Shi, Chia-Chin Cheng, Li‐Syuan Lu, Yung‐Chang Lin, Haolin Tang, Meng‐Lin Tsai, Chih‐Wei Chu, Kung‐Hwa Wei, Jr‐Hau He, Wen‐Hao Chang, Kazu Suenaga, Lain‐Jong Li · 发表于：Science · 年份：2015 · DOI：10.1126/science.aab4097 · 被引用次数：1208 · 研究领域：2D Materials and Applications、Chalcogenide Semiconductor Thin Films、MXene and MAX Phase Materials

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.