Band structure of Mg 1-x Zn x S y Se 1-y

作者：K. L. Teo, Yanpeng Feng, M F Li, Tow Chong Chong, Jian‐Bai Xia · 发表于：Semiconductor Science and Technology · 年份：1994 · DOI：10.1088/0268-1242/9/4/003 · 被引用次数：33 · 研究领域：Chalcogenide Semiconductor Thin Films、Advanced Semiconductor Detectors and Materials、Solid-state spectroscopy and crystallography

The empirical pseudopotential method within the virtual crystal approximation is used to calculate the band structure of Mg 1-x Zn x S y Se 1-y , which has recently been proved to be a potential semiconductor material for optoelectronic device applications in the blue spectral region. It is shown that MgZnSSe can be a direct or an indirect semiconductor depending on the alloy composition. Electron and hole effective masses are calculated for different compositions. Polynomial approximations are obtained for both the energy gap and the effective mass as functions of alloy composition at the Gamma valley. This information will be useful for the future design of blue wavelength optoelectronic devices as well as for assessment of their properties.