Cu(In,Ga)Se 2 solar cell with 16.7% active-area efficiency achieved by sputtering from a quaternary target

作者：Liangqi Ouyang, Daming Zhuang, Ming Zhao, Ning Zhang, Xiaolong Li, Li Guo, Rujun Sun, Mingjie Cao · 发表于：physica status solidi (a) · 年份：2015 · DOI：10.1002/pssa.201532005 · 被引用次数：43 · 研究领域：Chalcogenide Semiconductor Thin Films、Quantum Dots Synthesis And Properties、Copper-based nanomaterials and applications

In this work, we report the fabrication method of sputtering from a CIGS quaternary target to obtain high-efficiency CIGS thin-film solar-cell devices. The as-deposited CIGS absorbers are prepared by sputtering from a CIGS target and a subsequent annealing treatment under the Ar + H2Se (5% H2Se) atmosphere is applied on the absorbers. A high conversion efficiency of 16.7% is achieved with an average conversion efficiency of 15.9% over 10 cm × 10 cm on soda-lime glass. This result shows sputtering directly from a quaternary CIGS target is a very promising fabrication method to obtain high-performance solar-cell devices and is suitable for the further fabrication of large-area devices and modules. J–V characteristic curve of the CIGS solar cell with the best efficiency achieved by sputtering from a quaternary target.