An MOCVD-grown, pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 /spl mu/m

作者：S. R. Kurtz, R. M. Biefeld, Andrew A. Allerman, Arnold J. Howard, Mary H. Crawford, M. W. Pelczynski · 发表于：Conference on Lasers and Electro-Optics · 年份：1996 · 被引用次数：1 · 研究领域：Semiconductor Lasers and Optical Devices

Summary form only given. The authors pseudomorphic multiple quantum well device displays the same characteristic temperature as InAsSb-InAlAsSb injection lasers, emitting at 3.9 /spl mu/m, which have been recently reported. Both the MOCVD and MBE devices are designed with comparable, small valence band offsets for the multiple quantum wells. This valence band offset controls hole confinement in the quantum well and affects the Auger rate.