A physical model for planar spiral inductors on silicon

作者：C. Patrick Yue, Chang Keun Ryu, J. Lau, Thomas Lee, S.S. Wong · 年份：2002 · DOI：10.1109/iedm.1996.553144 · 被引用次数：369 · 研究领域：Radio Frequency Integrated Circuit Design、Electrostatic Discharge in Electronics、Electromagnetic Compatibility and Noise Suppression

This paper presents a physical model for planar spiral inductors on silicon. The model has been confirmed with measured and published data of inductors having different geometric and process parameters. This model is scalable with inductor geometry, allowing designers to predict and optimize the quality factor.