Raman studies of vitreous Si O 2 versus fictive temperature

作者：A.E. Geissberger, Frank L. Galeener · 发表于：Physical review. B, Condensed matter · 年份：1983 · DOI：10.1103/physrevb.28.3266 · 被引用次数：396 · 研究领域：Glass properties and applications、Building materials and conservation、Photonic Crystals and Applications

The first-order Raman spectra of vitreous Si${\mathrm{O}}_{2}$ have been studied as a function of sample fictive temperature ${T}_{F}$ for $900\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}\ensuremath{\le}{T}_{F}\ensuremath{\le}1550\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$. Three observations were made: (1) The broad features assigned to vibrations associated with the continuous random network of $v\ensuremath{-}\mathrm{Si}{\mathrm{O}}_{2}$ shift in frequency in a manner consistent with densification by reduction of the average Si-O-Si angle $\ensuremath{\theta}$; (2) the sharp "defect" lines at 492 and 606 ${\mathrm{cm}}^{\ensuremath{-}1}$ show little or no shift in frequency; (3) both defect line intensities exhibit Arrhenius behavior, $\mathrm{exp}(\frac{\ensuremath{-}\ensuremath{\Delta}E}{{k}_{B}{T}_{F}})$, with well-defined activation energies $\ensuremath{\Delta}E$ of 0.14 and 0.40 eV, respectively. These observations are interpreted using a central-force network dynamics model and changes in the number of planar threefold and regular fourfold ring defects.