The DUV Stability of Superlattice-doped CMOS Detector Arrays
作者:Michael E. Hoenk, Alexander G. Carver, Todd J. Jones, Matthew Dickie, Pei‐Jung Cheng, Frank Greer, Shouleh Nikzad, Joseph A. Sgro, Shraga Tsur · 发表于:IISS online library · 年份:2024 · DOI:10.60928/b43j-xz0o · 被引用次数:15 · 研究领域:Advanced Optical Sensing Technologies、Advanced Semiconductor Detectors and Materials、CCD and CMOS Imaging Sensors
Superlattice Doped Detectors - JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Superlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263nm pulsed, solid state and 193nm pulsed excimer lasers, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming, and no image memory at 1000 fps.