Multi-dimensional trade-off considerations of the 750V micro pattern trench IGBT for electric drive train applications

作者：Frank Wolter, Wolfgang Roesner, Maria Cotorogea, T. Geinzer, Martina Seider-Schmidt, Kae-Horng Wang · 年份：2015 · DOI：10.1109/ispsd.2015.7123400 · 被引用次数：36 · 研究领域：Silicon Carbide Semiconductor Technologies、Advanced DC-DC Converters、Multilevel Inverters and Converters

The EDT2 750V uses a micro pattern trench cell with a narrow mesa for reducing the on-state losses with a tailored channel width for short circuit robustness. To account for high system stray inductances (Lstray) and currents for Full or Hybrid Electric Vehicle inverter applications, it features a 750V voltage rating compared to the predecessor IGBT3 650V by an optimized vertical structure and proper plasma shaping. This plasma distribution not only determines the performance tradeoff between on-state and switching losses, but at the same time defines the surge voltage for a given Lstray*I in the application as visualized in a switch-off loss vs. surge voltage trade-off diagram. Shaping of the feedback capacitance Cgc optimizes the tunability of the switching slopes by means of an external gate resistor for an easier adaption to a wider range of system inductances with low losses.