Thermoelectric Properties of P-doped Mg2Si Semiconductors

作者：Jun-ichi Tani, Hiroyasu Kido · 发表于：Japanese Journal of Applied Physics · 年份：2007 · DOI：10.1143/jjap.46.3309 · 被引用次数：43 · 研究领域：Advanced Thermoelectric Materials and Devices、Thermal Expansion and Ionic Conductivity、Semiconductor materials and interfaces

The thermoelectric properties of P-doped Mg 2 Si [Mg 2 Si:P=1: x (0.0005≦ x ≦0.03)] fabricated by spark plasma sintering have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity (ρ), the Seebeck coefficient ( S ), and thermal conductivity (κ) between 300 and 900 K. P-doped Mg 2 Si samples are n -type in the measured temperature range. The electron concentration of P-doped Mg 2 Si at 300 K ranges from 6.7×10 18 for the P concentration of x =0.0005, to 3.1×10 19 cm -3 for x =0.03. First-principles calculation revealed that P atoms are expected to be primarily located at the Si sites in Mg 2 Si. ρ and S are strongly affected by x , but κ does not depend on x . The sample x =0.03 shows a maximum value of the figure of merit Z T of 0.33 at 865 K.