Lezhi Wang

发表论文 12 篇 · 总被引 184 次 · h-index 8

代表论文

1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer (2024 · IEEE Electron Device Letters · 被引 39)
Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation (2018 · IEEE Electron Device Letters · 被引 31)
p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics (2024 · IEEE Electron Device Letters · 被引 26)
Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications (2024 · IEEE Transactions on Electron Devices · 被引 21)
Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer (2019 · IEEE transactions on magnetics · 被引 20)
Report of GaN HEMTs on 8-in Sapphire (2024 · IEEE Transactions on Electron Devices · 被引 11)