Weitao Yang

发表论文 8 篇 · 总被引 86 次 · h-index 5

代表论文

• 1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer (2024 · IEEE Electron Device Letters · 被引 39)
• p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics (2024 · IEEE Electron Device Letters · 被引 26)
• Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization (2023 · Micromachines · 被引 9)
• Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate (2024 · Micromachines · 被引 7)
• Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure (2024 · IEEE Transactions on Electron Devices · 被引 6)
• Demonstration of 3300-V GaN HEMTs on 6-inch Sapphire for Medium-Voltage Aplications: A Cost-Effective and High-Performance Solution (2025 · International Symposium on Power Semiconductor Devices and IC's · 被引 2)