Qijun Li

发表论文 18 篇 · 总被引 308 次 · h-index 9

代表论文

• True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO (2023 · Advances in Materials · 被引 79)
• Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation (2022 · International Electron Devices Meeting · 被引 46)
• 3D stacked IGZO 2T0C DRAM array with multibit capability for computing in memory applications (2025 · Science Advances · 被引 41)
• Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency (2023 · IEEE Electron Device Letters · 被引 39)
• A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel (2021 · International Electron Devices Meeting · 被引 35)
• BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V (2022 · International Electron Devices Meeting · 被引 23)