Weiao Chen

机构：Fudan University

发表论文 9 篇 · 总被引 39 次 · h-index 4

代表论文

• High drain field impact ionization transistors as ideal switches (2024 · Nature Communications · 被引 23)
• Two-Dimensional 2H-TaS 2 Contact for Fermi-Level Pinning-Free P-Type WSe 2 Field-Effect Transistors (2025 · ACS Applied Materials & Interfaces · 被引 6)
• An Al-Drain Silicon Transistor With Ultra-Steep Subthreshold Slope and Low Operating Voltage (2025 · IEEE Electron Device Letters · 被引 5)
• Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits (2023 · Journal of Physics D Applied Physics · 被引 4)
• Unipolar Barrier Engineering in 1D/2D Hybrid Van der Waals Heterostructures for High‐Performance Broadband Polarization‐Sensitive Photodetection (2025 · Small · 被引 1)
• A CapacitorlessGraphene Drain Impact Ionization Memorywith Ultralow Write Pulses (2026 · Nano Letters)