Changxin Mi

机构：Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

发表论文 12 篇 · 总被引 19 次 · h-index 3

代表论文

• Ultra-scaled GaN HEMTs on Sapphire with fT/fmax = 229/528 GHz and NFmin ~ 1 dB (2024 · 被引 7)
• Achieving Ultralow Specific Contact Resistivity in Ti/n + -GaN Ohmic Contacts by Mitigating the FLP Effect with a Gallium Oxide Interlayer (2025 · ACS Applied Electronic Materials · 被引 6)
• AlGaN/GaN Heterojunction Bipolar Transistors With Record fᴛ/fₘₐₓ=21.6 /4.23 GHz (2025 · IEEE Electron Device Letters · 被引 3)
• Advanced Down-Scaling Technology and its Physical Mechanism for mm-Wave/ Terahertz GaN HEMTs with High Frequency, Low Noise, and High JFoM (2024 · 被引 2)
• 50 NM Gan Hemts Technology with High Frequency, Low Noise, and High JFoM (2025 · 被引 1)
• A selective gate-recess and passivation integrated process for high-performance enhancement-mode GaN HEMTs on an ultrathin barrier (2026 · Microelectronics Journal)