R. Kaspi

机构：United States Air Force Research Laboratory, U.S. Air Force Research Laboratory Directed Energy Directorate

发表论文 44 篇 · 总被引 673 次 · h-index 13

代表论文

• Visualizing Interfacial Structure at Non-Common-Atom Heterojunctions with Cross-Sectional Scanning Tunneling Microscopy (2000 · Physical Review Letters · 被引 81)
• Interpolating semiconductor alloy parameters: Application to quaternary III–V band gaps (2003 · Journal of Applied Physics · 被引 78)
• Improved compositional abruptness at the InGaAs on GaAs interface by presaturation with In during molecular-beam epitaxy (1995 · Applied Physics Letters · 被引 69)
• Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates (1997 · Journal of Applied Physics · 被引 62)
• Surface chemistry evolution during molecular beam epitaxy growth of InGaAs (1995 · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 被引 51)
• Dislocation Density Reduction in GaSb Films Grown on GaAs Substrates by Molecular Beam Epitaxy (1997 · Journal of The Electrochemical Society · 被引 48)