Leiying Ying
机构:Institute of Microelectronics, San’an Optoelectronics (China), Xiamen University of Technology · ORCID:0009-0008-5312-7984
发表论文 105 篇 · 总被引 1294 次 · h-index 20
代表论文
- Enhancing Performance of GaN/Ga 2 O 3 P‐N Junction Uvc Photodetectors via Interdigitated Structure (2023 · Small Methods · 被引 44)
- Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity (2023 · Nano-Micro Letters · 被引 27)
- Dual‐Modal Sensing Platform Based on Flexible GaN Microdisk Lasers on PDMS Substrate (2025 · Advanced Functional Materials · 被引 14)
- High performance composite phosphor-in-glass film for laser-driven warm white light on patterned sapphire substrate (2024 · Journal of Materiomics · 被引 11)
- Fabrication of GaN-Based Flexible VLEDs with Double-Side Light Emitting (2024 · ACS Photonics · 被引 11)
- On‐Chip Broadband Multiwavelength Microlaser Array in Visible Region (2025 · Laser & Photonics Review · 被引 8)