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Leiying Ying

机构:Institute of Microelectronics, San’an Optoelectronics (China), Xiamen University of Technology · ORCID:0009-0008-5312-7984

发表论文 105 篇 · 总被引 1294 次 · h-index 20

代表论文

  • Enhancing Performance of GaN/Ga 2 O 3 P‐N Junction Uvc Photodetectors via Interdigitated Structure (2023 · Small Methods · 被引 44)
  • Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity (2023 · Nano-Micro Letters · 被引 27)
  • Dual‐Modal Sensing Platform Based on Flexible GaN Microdisk Lasers on PDMS Substrate (2025 · Advanced Functional Materials · 被引 14)
  • High performance composite phosphor-in-glass film for laser-driven warm white light on patterned sapphire substrate (2024 · Journal of Materiomics · 被引 11)
  • Fabrication of GaN-Based Flexible VLEDs with Double-Side Light Emitting (2024 · ACS Photonics · 被引 11)
  • On‐Chip Broadband Multiwavelength Microlaser Array in Visible Region (2025 · Laser & Photonics Review · 被引 8)