Dongning Yao

机构：Shanghai Institute of Microsystem and Information Technology

发表论文 41 篇 · 总被引 913 次 · h-index 16

代表论文

Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application (2012 · Applied Physics Letters · 被引 165)
Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications (2014 · Applied Physics Letters · 被引 99)
High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application (2014 · Applied Physics Letters · 被引 75)
CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performance (2015 · Journal of Materials Science Materials in Electronics · 被引 25)
Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon (2015 · Nanoscale Research Letters · 被引 24)
Study on the phase change material Cr-doped Sb3Te1 for application in phase change memory (2015 · Journal of Non-Crystalline Solids · 被引 19)