James A. Cooper

机构：Purdue University West Lafayette · ORCID：0000-0001-7781-3163

发表论文 264 篇 · 总被引 8936 次 · h-index 46

代表论文

• Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (2014 · CERN Document Server (European Organization for Nuclear Research) · 被引 379)
• Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC (2020 · IEEE Electron Device Letters · 被引 86)
• Physical Properties of Silicon Carbide (2014 · 被引 40)
• Design Guidelines for Superjunction Devices in the Presence of Charge Imbalance (2018 · IEEE Transactions on Electron Devices · 被引 30)
• The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC (2020 · IEEE Electron Device Letters · 被引 20)
• Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors (2015 · Semiconductor Science and Technology · 被引 20)