Xiaoyu Ke

机构：Institute of Microelectronics · ORCID：0009-0001-2375-5540

发表论文 14 篇 · 总被引 34 次 · h-index 3

代表论文

• Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf₀.₅Zr₀.₅O₂/SiOx/Si (MIFIS) Gate Structure (2024 · IEEE Transactions on Electron Devices · 被引 20)
• Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses (2024 · IEEE Transactions on Electron Devices · 被引 6)
• Impact of Saturated Spontaneous Polarization on the Memory Window and Endurance of Hafnium-Based Si Channel FeFET (2025 · IEEE Transactions on Electron Devices · 被引 3)
• The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor (2024 · Applied Physics Letters · 被引 3)
• The Vth shift mechanism in MIFIS FeFET: A field-driven perspective (2025 · Applied Physics Letters · 被引 1)
• Effect of Top Al 2 O 3 Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 /SiO x /Si (MIFIS) Gate Structure (2025 · IEEE Transactions on Electron Devices · 被引 1)