Daniel S. Schulman

机构：Pennsylvania State University, Intel (United States), Intel (United Kingdom) · ORCID：0000-0002-0751-0578

发表论文 21 篇 · 总被引 2082 次 · h-index 13

代表论文

• Contact engineering for 2D materials and devices (2018 · Chemical Society Reviews · 被引 861)
• Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors (2017 · ACS Nano · 被引 264)
• Carbon doping of WS 2 monolayers: Bandgap reduction and p-type doping transport (2019 · Science Advances · 被引 177)
• Public perceptions of global warming (1995 · Climatic Change · 被引 159)
• Defect-Controlled Nucleation and Orientation of WSe 2 on hBN: A Route to Single-Crystal Epitaxial Monolayers (2019 · ACS Nano · 被引 154)
• Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy (2018 · ACS Nano · 被引 97)