Hiroshi Nakashima

机构：The University of Osaka · ORCID：0000-0002-3551-391X

发表论文 328 篇 · 总被引 4963 次 · h-index 38

代表论文

Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors (2021 · IEEE Electron Device Letters · 被引 25)
Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p -MOSFET (2020 · AIP Advances · 被引 7)
STATIC LOADING TESTS OF RC MOMENT-RESISTING FRAMES INFILLED WITH CLT PANELS (2025 · Journal of Structural Engineering B · 被引 2)
High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression (2022 · Applied Physics Express · 被引 2)
(Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications (2021 · ECS Transactions · 被引 2)
Data-driven Medical and Health Support Created Using Bio-digital Twin (2021 · NTT technical review · 被引 2)