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Xueqian Zhong

机构:Hongzhiwei Technology (China), Zhejiang University · ORCID:0000-0002-8316-120X

发表论文 21 篇 · 总被引 447 次 · h-index 9

代表论文

  • High Temperature Stability and the Performance Degradation of SiC MOSFETs (2013 · IEEE Transactions on Power Electronics · 被引 165)
  • An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature (2014 · IEEE Transactions on Power Electronics · 被引 96)
  • Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode (2016 · 被引 53)
  • Experimental Demonstration and Analysis of a 1.35-kV 0.92-m $\Omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode (2018 · IEEE Transactions on Electron Devices · 被引 39)
  • Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique (1991 · IEEE Electron Device Letters · 被引 16)
  • Assessing the future trends of soil trace metal contents in French urban gardens (2021 · Environmental Science and Pollution Research · 被引 15)