Sheng‐Kai Su
ORCID:0000-0002-1298-3986
发表论文 40 篇 · 总被引 697 次 · h-index 15
代表论文
- First Demonstration of GAA Monolayer-MoS 2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 79)
- Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping (2023 · Nature Electronics · 被引 40)
- Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 30)
- High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method (2023 · ACS Nano · 被引 28)
- High-performance monolayer MoS 2 nanosheet GAA transistor (2023 · Nanotechnology · 被引 22)
- Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors (2023 · ACS Nano · 被引 20)