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Sheng‐Kai Su

ORCID:0000-0002-1298-3986

发表论文 40 篇 · 总被引 697 次 · h-index 15

代表论文

  • First Demonstration of GAA Monolayer-MoS 2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 79)
  • Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping (2023 · Nature Electronics · 被引 40)
  • Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 30)
  • High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method (2023 · ACS Nano · 被引 28)
  • High-performance monolayer MoS 2 nanosheet GAA transistor (2023 · Nanotechnology · 被引 22)
  • Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors (2023 · ACS Nano · 被引 20)