Jiangnan Dai

机构：Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology · ORCID：0000-0002-0897-4534

发表论文 9 篇 · 总被引 316 次 · h-index 5

代表论文

• Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition (2021 · Science Advances · 被引 241)
• A Novel Sapphire@PiGF@Sapphire Color Converter with High Luminescence Saturation Threshold for Laser Lighting (2024 · Advanced Functional Materials · 被引 44)
• A Bias‐Tunable Multispectral Photodetector Based on a GaN/Te x Se 1‐ x Homo‐Type Heterojunction with a Unidirectional Barrier (2025 · Advanced Science · 被引 13)
• Enhancement-mode CdS nanobelts field effect transistors and phototransistors with HfO2 passivation (2019 · Applied Physics Letters · 被引 8)
• Conformal Growth of Nano‐Patterned Monolayer MoS 2 with Periodic Strain via Patterned Substrate Engineering for High‐performance Photodetectors (2024 · Laser & Photonics Review · 被引 6)
• r‐サファイア上の非極性n‐ZnO/p‐AlGaNヘテロ接合発光ダイオードからのエレクトロルミネセンス (2017 · Journal of Physics D Applied Physics · 被引 2)