Jie Hu

机构：Shenzhen University · ORCID：0000-0002-8808-7635

发表论文 15 篇 · 总被引 1938 次 · h-index 6

代表论文

• The 2018 GaN power electronics roadmap (2018 · Journal of Physics D Applied Physics · 被引 1310)
• Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation (2017 · IEEE Electron Device Letters · 被引 181)
• Materials and processing issues in vertical GaN power electronics (2017 · Materials Science in Semiconductor Processing · 被引 168)
• 1200 V GaN vertical fin power field-effect transistors (2017 · 被引 120)
• Trench formation and corner rounding in vertical GaN power devices (2017 · Applied Physics Letters · 被引 108)
• Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests (2017 · IEEE Electron Device Letters · 被引 45)