Hongshun Du
机构：Tianjin University of Technology
发表论文 4 篇 · 总被引 32 次 · h-index 3
代表论文
- Reconfigurable Al 2 O 3 -Based Memristor for All-in-One Artificial Synapse and Nociceptor Neurons (2025 · The Journal of Physical Chemistry Letters · 被引 15)
- Pt/ZrOx/Al2O3/TiN self-rectifying memristor crossbar array based on synergistic effect of interface barrier modulation and oxygen vacancy migration (2025 · Journal of Alloys and Compounds · 被引 11)
- Performance improvement of bilayer memristor based on hafnium oxide by Ti/W synergy and its synaptic behavior (2024 · Vacuum · 被引 5)
- Application of Circuit Model Based on Self-Rectifying Al 2 O 3 /TaO X Memristor and Generation of Physically Unclonable Functions (2025 · IEEE Transactions on Electron Devices · 被引 1)