Shuming Guo

机构：China Resources (China)

发表论文 14 篇 · 总被引 50 次 · h-index 4

代表论文

• 3D Trench Hf 0.5 Zr 0.5 O 2 -Based 32 Kbit 1T1C FeRAM Chip with 2/5 ns Write/Read Speed, Low Power Consumption (0.605 pJ/bit) and Prominent High-Temperature Reliability (Baking @ 175°C) (2024 · 被引 12)
• In‐Sensor Reservoir Computing Using Ferroelectric Optoelectronic Synapse for Near‐Infrared Face Recognition (2025 · Advanced Intelligent Systems · 被引 9)
• Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays (2024 · IEEE Transactions on Electron Devices · 被引 9)
• Influence of the Nitrogen Flux Ratio on the Structural, Morphological and Tribological Properties of TiN Coatings (2022 · Coatings · 被引 8)
• A 0.09-pJ/Bit Logic-Compatible Multiple-Time Programmable (MTP) Memory-Based PUF Design for IoT Applications (2024 · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 被引 4)
• Hybrid Recovery Strategy for the Imprint Effect in HZO-Based FeRAM Under Incomplete Polarization State (2025 · IEEE Electron Device Letters · 被引 3)