Yan He

机构：Hangzhou Dianzi University · ORCID：0000-0002-1260-4536

发表论文 39 篇 · 总被引 452 次 · h-index 11

代表论文

• CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and Precision-Programmable CNN Inference (2021 · IEEE Journal of Solid-State Circuits · 被引 131)
• Magnetoelectric Bio-Implants Powered and Programmed by a Single Transmitter for Coordinated Multisite Stimulation (2021 · IEEE Journal of Solid-State Circuits · 被引 41)
• ASCH-PUF: A “Zero” Bit Error Rate CMOS Physically Unclonable Function With Dual-Mode Low-Cost Stabilization (2023 · IEEE Journal of Solid-State Circuits · 被引 39)
• 25.3 A 65nm Edge-Chasing Quantizer-Based Digital LDO Featuring 4.58ps-FoM and Side-Channel-Attack Resistance (2020 · 被引 31)
• 36.5 An Automatic Self-Checking and Healing Physically Unclonable Function (PUF) with <3×10 -8 Bit Error Rate (2021 · 被引 30)
• 34.3 An 8.2mm 3 Implantable Neurostimulator with Magnetoelectric Power and Data Transfer (2020 · 被引 23)