Wenwu Wang

机构：Chinese Academy of Sciences, Institute of Microelectronics, Institute of Microelectronics · ORCID：0000-0002-1862-5434

发表论文 211 篇 · 总被引 1745 次 · h-index 18

代表论文

• Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement (2023 · IEEE Transactions on Electron Devices · 被引 28)
• Hybrid integrated Si nanosheet GAA-FET and stacked SiGe/Si FinFET using selective channel release strategy (2023 · Microelectronic Engineering · 被引 17)
• Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration (2023 · IEEE Transactions on Electron Devices · 被引 13)
• Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors (2024 · IEEE Transactions on Electron Devices · 被引 10)
• Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer (2024 · IEEE Transactions on Electron Devices · 被引 8)
• Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory (2023 · ACS Applied Electronic Materials · 被引 7)