Jianguo Chen

机构：Fuzhou University · ORCID：0000-0002-4223-9437

发表论文 42 篇 · 总被引 176 次 · h-index 6

代表论文

• Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si 3 N 4 /AlGaN/GaN MIS-HEMTs with an In-Situ Si 3 N 4 Interfacial Layer (2019 · IEEE Transactions on Electron Devices · 被引 42)
• Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process (2017 · IEEE Transactions on Electron Devices · 被引 33)
• Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry (2018 · IEEE Transactions on Electron Devices · 被引 23)
• Elimination of Gate Leakage in GaN FETs by Placing Oxide Spacers on the Mesa Sidewalls (2013 · IEEE Electron Device Letters · 被引 19)
• Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate (2017 · Solid-State Electronics · 被引 17)
• Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs (2022 · IEEE Transactions on Electron Devices · 被引 4)