Xiangdong Li

机构：Xidian University, Academy of Mathematics and Systems Science · ORCID：0000-0002-6694-0914

发表论文 99 篇 · 总被引 1322 次 · h-index 20

代表论文

• Understanding the Role of Dislocation Defects of GaN HEMT under Short-Circuit Stress Through Transient Thermal Characterization (2025 · IEEE Transactions on Power Electronics · 被引 7)
• MIS p-GaN Tunneling Gate HEMTs on 6-In Si: A Novel Approach to Enhance Gate Reliability (2025 · IEEE Transactions on Electron Devices · 被引 7)
• Comprehensive study of Schottky-gated p-channel GaN field-effect transistors (2024 · Applied Physics Letters · 被引 6)
• Balancing Threshold Voltage and On-Resistance of p-GaN Gate HEMTs via Mg Doping Engineering (2025 · IEEE Transactions on Electron Devices · 被引 5)
• Dynamic Monolayer WSe 2 Electrolyte‐Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing (2025 · Small · 被引 4)
• A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity (2025 · Applied Physics Letters · 被引 4)