Mingkai Bai

机构：Chinese Academy of Sciences, Institute of Microelectronics, Institute of Microelectronics · ORCID：0000-0001-9808-1694

发表论文 24 篇 · 总被引 170 次 · h-index 7

代表论文

Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂ (2024 · IEEE Electron Device Letters · 被引 44)
The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances (2023 · Journal of Applied Physics · 被引 42)
Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf₀.₅Zr₀.₅O₂/SiOx/Si (MIFIS) Gate Structure (2024 · IEEE Transactions on Electron Devices · 被引 20)
Understanding the stress effect of TiN top electrode on ferroelectricity in Hf0.5Zr0.5O2 thin films (2023 · Journal of Applied Physics · 被引 16)
Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer (2024 · IEEE Transactions on Electron Devices · 被引 15)
Regulating ferroelectricity in Hf0.5Zr0.5O2 thin films: Exploring the combined impact of oxygen vacancy and electrode stresses (2023 · Journal of Applied Physics · 被引 10)