Zhengxun Lai

机构：ON Semiconductor (United States), Hunan University, National University of Defense Technology, Changsha University · ORCID：0000-0001-6057-2199

发表论文 67 篇 · 总被引 1984 次 · h-index 23

代表论文

• Synergistic Active Phases of Transition Metal Oxide Heterostructures for Highly Efficient Ammonia Electrosynthesis (2023 · Advanced Functional Materials · 被引 81)
• An inorganic-blended p-type semiconductor with robust electrical and mechanical properties (2024 · Nature Communications · 被引 47)
• Electrical Polarity Modulation in V‐Doped Monolayer WS 2 for Homogeneous CMOS Inverters (2024 · Small · 被引 20)
• Highly Reliable RRAM-Based Physical Unclonable Function With Auto-Write Technique (2026 · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 被引 18)
• High‐Performance Nanogap Photodetectors Based on 2D Halide Perovskites with a Novel Spacer Cation (2024 · Advanced Functional Materials · 被引 18)
• Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance (2024 · Nature Communications · 被引 18)